发明名称 |
METHODS OF FORMING BUMP STRUCTURES THAT INCLUDE A PROTECTION LAYER |
摘要 |
<p>PURPOSE: A method for forming bump structures including a protection layer is provided to improve the performance of a semiconductor device by preventing the oxidation of conductive pads by the protection layer. CONSTITUTION: A passivation layer is formed on a conductive pad(12) and an insulation material layer(10). The passivation layer is etched. A protection layer(202) is formed on the exposed part of the conductive pad and an opening part of the passivation layer. A thermosetting material layer(218A) is formed on the protection layer. The thermosetting material layer is etched. A conductive bump(24B) is formed on the conductive pad after the exposed part of the protection layer is removed.</p> |
申请公布号 |
KR20130045179(A) |
申请公布日期 |
2013.05.03 |
申请号 |
KR20120115059 |
申请日期 |
2012.10.16 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
KUECHENMEISTER FRANK;LEHMANN LOTHAR;PLATZ ALEXANDER;JUNGNICKEL GOTTHARD;KOSGALWIES SVEN |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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