发明名称 METHODS OF FORMING BUMP STRUCTURES THAT INCLUDE A PROTECTION LAYER
摘要 <p>PURPOSE: A method for forming bump structures including a protection layer is provided to improve the performance of a semiconductor device by preventing the oxidation of conductive pads by the protection layer. CONSTITUTION: A passivation layer is formed on a conductive pad(12) and an insulation material layer(10). The passivation layer is etched. A protection layer(202) is formed on the exposed part of the conductive pad and an opening part of the passivation layer. A thermosetting material layer(218A) is formed on the protection layer. The thermosetting material layer is etched. A conductive bump(24B) is formed on the conductive pad after the exposed part of the protection layer is removed.</p>
申请公布号 KR20130045179(A) 申请公布日期 2013.05.03
申请号 KR20120115059 申请日期 2012.10.16
申请人 GLOBALFOUNDRIES INC. 发明人 KUECHENMEISTER FRANK;LEHMANN LOTHAR;PLATZ ALEXANDER;JUNGNICKEL GOTTHARD;KOSGALWIES SVEN
分类号 H01L21/60 主分类号 H01L21/60
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