| 摘要 |
The invention relates to a chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber, exciting the material gas into a state including plasma or radicals, introducing the material gas to a heated substrate, first depositing of diamond on the substrate with the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen, second depositing of diamond on the first deposited diamond with the material gas having a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen or a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 mu m in thickness, etching the substrate away from the deposited diamond by an etchant to obtain a diamond plate, metalizing the surface of the diamond plate which was grown in the second depositing step, and fixing the metalized surface on an end surface of a tool body to thereby obtain a diamond tool with a rake surface which was grown in the first depositing step and with a fixation surface which was grown in the second depositing step.
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