3D STRUCTURED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device of a 3D structure and a manufacturing method thereof are provided to improve the efficiency of a program operation, an erasing operation, and a reading operation by minimizing interference between memory cells and between selection gates. CONSTITUTION: A plurality of control gates(28) are laminated on a substrate. A plurality of first channels pass through the plurality of control gates. A plurality of memory film patterns(23A) surround the first channel and are interposed between the first channel and the plurality of control gates. The plurality of memory film patterns are separated. The first channel includes a plurality of protrusion parts between the plurality of control gates.