| 摘要 |
A semiconductor device includes a substrate having an active region, a gate structure on the active region, and spacers formed on opposite sides of the gate structure. The gate structure includes a gate dielectric layer on the active region, a metal gate on the gate dielectric layer, and sidewalls on both side surfaces of the gate structure. Each of the sidewalls is interposed between the metal gate and one of the spacers. The sidewalls include a self-assembly material. The gate dielectric layer includes a high-K material. The spacers include silicon nitride. The gate structure also includes a buffer layer interposed between the metal gate and the gate dielectric layer.
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