PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS
摘要
Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
申请公布号
WO2013062831(A2)
申请公布日期
2013.05.02
申请号
WO2012US60668
申请日期
2012.10.17
申请人
APPLIED MATERIALS, INC.;LUBOMIRSKY, DMITRY;NEMANI, SRINIVAS;YIEH, ELLIE;BELOSTOTSKIY, SERGEY G.
发明人
LUBOMIRSKY, DMITRY;NEMANI, SRINIVAS;YIEH, ELLIE;BELOSTOTSKIY, SERGEY G.