| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can be used under high-temperature environment. <P>SOLUTION: A wire connection region composed of a stack of a first inner electrode and a second inner electrode is isolated from a first outer electrode and a second outer electrode by alloying prevention grooves so that the development of an Au-Al alloy layer grown from a wire-bonding interface is suppressed, thereby preventing cracks of a passivation film on a surface of a semiconductor device. <P>COPYRIGHT: (C)2013,JPO&INPIT |
