| 发明名称 |
OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE |
| 摘要 |
The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property and credibility, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Si, In, Zn, and O as constituent atoms.
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| 申请公布号 |
US2013105788(A1) |
申请公布日期 |
2013.05.02 |
| 申请号 |
US201013393335 |
申请日期 |
2010.05.06 |
| 申请人 |
CHIKAMA YOSHIMASA;NISHIKI HIROHIKO;OHTA YOSHIFUMI;HARA TAKESHI;NAKAGAWA OKIFUMI;AITA TETSUYA;SUZUKI MASAHIKO;TAKEI MICHIKO;HARUMOTO YOSHIYUKI;NAKAGAWA KAZUO;MIZUNO HINAE;SHARP KABUSHIKI KAISHA |
发明人 |
CHIKAMA YOSHIMASA;NISHIKI HIROHIKO;OHTA YOSHIFUMI;MIZUNO YUUJI;HARA TAKESHI;NAKAGAWA OKIFUMI;AITA TETSUYA;SUZUKI MASAHIKO;TAKEI MICHIKO;HARUMOTO YOSHIYUKI;NAKAGAWA KAZUO |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
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