发明名称 Method Of Polishing A Substrate
摘要 A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon dioxide removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon dioxide removal rate selectivity.
申请公布号 US2013109181(A1) 申请公布日期 2013.05.02
申请号 US201113282977 申请日期 2011.10.27
申请人 GUO YI;REDDY KANCHARLA-ARUN KUMAR 发明人 GUO YI;REDDY KANCHARLA-ARUN KUMAR
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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