发明名称 |
Method Of Polishing A Substrate |
摘要 |
A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon dioxide removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon dioxide removal rate selectivity.
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申请公布号 |
US2013109181(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113282977 |
申请日期 |
2011.10.27 |
申请人 |
GUO YI;REDDY KANCHARLA-ARUN KUMAR |
发明人 |
GUO YI;REDDY KANCHARLA-ARUN KUMAR |
分类号 |
H01L21/306;H01L21/304 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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