METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Disclosed is a method of manufacturing a semiconductor device whereby an etched shape can be made more uniform in the middle and at the periphery. In this method, a semiconductor device comprising said wafer is manufactured using a plasma etching device equipped with: a chamber; a chuck arranged in this chamber and whereon a wafer to be processed is placed; a focus ring arranged at the periphery of said chuck so as to surround the position of placement of said wafer; and a gas supply mechanism that is capable of supplying gas of various different types in accordance with position in the radial direction of said wafer. A wafer formed with an organic film is placed on said chuck. From said process gas supply mechanism, etchant gas that etches the organic film of said wafer is introduced into the middle of said wafer. From said process gas supply mechanism, an etching inhibiting factor gas having the property of reacting with said etchant gas is introduced at the periphery of said wafer. Plasma etching of said wafer is performed using said etchant gas.