| 摘要 |
<p>A method for manufacturing a silicon carbide substrate, comprising: a step for preparing an ingot formed from single crystal silicon carbide; a step for obtaining a silicon carbide substrate (10) by slicing the ingot; and a step for polishing the surface of the silicon carbide substrate (10). At the step for obtaining the silicon carbide substrate (10), the ingot is sliced such that the cut advances in a direction at which the angle formed with respect to the <11-20> direction or the <1-100> direction is 15±5 degrees in an orthogonal projection on the {0001} plane. At the step for polishing the surface of the silicon carbide substrate (10), at least one of main surfaces (10A, 10B) of the silicon carbide substrate (10) is polished while the at least one of the main surfaces (10A, 10B) of the silicon carbide substrate (10) is entirely in contact with a polishing surface (30A, 40A).</p> |
