发明名称 |
METHOD OF FORMING SEMICONDUCTOR DEVICES USING SMT |
摘要 |
The present invention provides a method of forming semiconductor devices using SMT. The method comprises providing a substrate; depositing an SiO2 buffer film and a low tensile stress SiN film on the substrate; applying photoresist over the low tensile stress SiN film and exposing the low tensile stress SiN film on the NMOS region through photoresist exposure; applying UV radiation to the exposed low tensile stress SiN film; removing some hydrogen in the low tensile stress SiN film on the NMOS region and removing photoresist over the PMOS region; performing a rapid thermal annealing process to induce tensile stress in the NMOS channel region; and removing the SiN film and the SiO2 buffer film. According to the method of forming semiconductor devices using SMT of the present invention, the conventional SMT is greatly simplified.
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申请公布号 |
US2013109186(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213662277 |
申请日期 |
2012.10.26 |
申请人 |
ZHANG WENGUANG;XU QIANG;ZHENG CHUNSHENG;XU LINGZHI;CHEN YUWEN;SHANGHAI HUALI MICROELECTRONICS CORPORATION |
发明人 |
ZHANG WENGUANG;XU QIANG;ZHENG CHUNSHENG;XU LINGZHI;CHEN YUWEN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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