PHASE-CHANGE MEMORY DEVICE

摘要

A phase-change memory device comprises a first insulating layer on a substrate and a through hole formed in the first insulating layer. A first phase-change material layer is positioned along lower sidewalls and a lower face of the through hole. A second insulating layer is laterally surrounded by the first phase-change material layer. A second phase-change material layer is positioned along upper sidewalls of the through hole and in contact with upper surfaces of the first phase-change material layer and the second insulating layer.