发明名称 |
METHOD FOR MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM, SUBSTRATE HAVING CRYSTALLINE SEMICONDUCTOR FILM, AND THIN FILM TRANSISTOR |
摘要 |
<p>To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film.</p> |
申请公布号 |
KR20130044124(A) |
申请公布日期 |
2013.05.02 |
申请号 |
KR20117019213 |
申请日期 |
2010.05.10 |
申请人 |
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;PANASONIC CORPORATION |
发明人 |
KATO TOMOYA;ODA TOMOHIKO;OOTAKA SEI |
分类号 |
H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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