发明名称 |
PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL |
摘要 |
Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.
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申请公布号 |
US2013105085(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213647574 |
申请日期 |
2012.10.09 |
申请人 |
APPLIED MATERIALS, INC.;APPLIED MATERIALS, INC. |
发明人 |
YOUSIF IMAD;SALINAS MARTIN JEFFREY;BANNA SAMER;NGUYEN ANDREW;TODOROW VALENTIN;LUBOMIRSKY DMITRY;AGARWAL ANKUR;BERA KALLOL |
分类号 |
H01L21/20;H01L21/306 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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