| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of suppressing deterioration of a reflection electrode layer. <P>SOLUTION: A semiconductor light-emitting device has: a semiconductor layer having a first principal surface and a second principal surface formed on an opposite side of the first principal surface, including a light-emitting layer, and not including a substrate on the first principal surface side; a first electrode provided on the second principal surface of the semiconductor layer; a second electrode provided on the second principal surface of the semiconductor layer and including a silver layer; a barrier metal layer covering the second electrode; a first metal pillar; a resin supporting the semiconductor layer together with the first and second metal pillars; and a phosphor layer provided on the first principal surface of the semiconductor layer without interposing a substrate between the phosphor layer and the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
