PROCESS FOR SMOOTHING A SURFACE VIA HEAT TREATMENT

摘要

The process for smoothing a rough surface (4) of a first substrate (3) made of a semiconductor alloy based on at least two elements chosen from Ga, As, Al, In, P and N is implemented by placing a second substrate (6) facing the first substrate (3) so that the rough surface (4) is placed facing a surface of the second substrate (6). The first (3) and second (6) substrates are separated by a distance of at least 10 µm, the facing portions of the two substrates (3, 6) defining a confinement space (5). The first substrate (3) is then heated so as to partially desorb one of the elements of said alloy and to reach the saturated vapour pressure of this element in the confinement space (5) and to obtain a surface-atom mobility that is sufficient to reduce the roughness of the rough surface (4).