发明名称 CURRENT CONTROL SEMICONDUCTOR DEVICE AND CONTROL APPARATUS USING SAME
摘要 This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the Center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(ˆš3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8.
申请公布号 EP2587531(A1) 申请公布日期 2013.05.01
申请号 EP20110800568 申请日期 2011.06.02
申请人 HITACHI AUTOMOTIVE SYSTEMS, LTD. 发明人 HIROTSU TEPPEI;KANEKAWA NOBUYASU;TANABE ITARU
分类号 H01L21/8234;H01L21/822;H01L27/02;H01L27/04;H01L27/088;H01L29/417;H01L29/423;H01L29/78;H03K17/14;H03K17/695 主分类号 H01L21/8234
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