| 发明名称 |
COMPOSITION FOR POLISHING SILICON CARBIDE SUBSTRATE AND METHOD FOR POLISHING SILICON CARBIDE SUBSTRATE |
| 摘要 |
<p>The invention provides a silicon carbide substrate polishing composition for polishing a surface of a silicon carbide substrate, characterized in that the composition contains water and colloidal silica particles having a true specific gravity of 2.10 to 2.30, and has a free alkali metal ion concentration of 1 ppm to 150 ppm.</p> |
| 申请公布号 |
EP2587526(A1) |
申请公布日期 |
2013.05.01 |
| 申请号 |
EP20110798149 |
申请日期 |
2011.06.21 |
| 申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SEKIGUCHI, KAZUTOSHI;NISHIMURA, TOHRU |
| 分类号 |
H01L21/304;B24B37/00;B24B37/04 |
主分类号 |
H01L21/304 |
| 代理机构 |
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