发明名称 |
Silicon nitride dry trim without top pulldown |
摘要 |
A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed. |
申请公布号 |
US8431461(B1) |
申请公布日期 |
2013.04.30 |
申请号 |
US201113329035 |
申请日期 |
2011.12.16 |
申请人 |
ZHONG QINGHUA;KIMURA YOSHIE;KIM TAE WON;FU QIAN;LO GLADYS;UPADHYAYA GANESH;YAMAGUCHI YOKO;LAM RESEARCH CORPORATION |
发明人 |
ZHONG QINGHUA;KIMURA YOSHIE;KIM TAE WON;FU QIAN;LO GLADYS;UPADHYAYA GANESH;YAMAGUCHI YOKO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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