发明名称 Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the same
摘要 Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
申请公布号 US8432001(B2) 申请公布日期 2013.04.30
申请号 US20070300177 申请日期 2007.05.10
申请人 JUNG JU-HWAN;KO HYOUNG-SOO;PARK HONG-SIK;KIM YONG-SU;HONG SEUNG-BUM;SEAGATE TECHNOLOGY LLC 发明人 JUNG JU-HWAN;KO HYOUNG-SOO;PARK HONG-SIK;KIM YONG-SU;HONG SEUNG-BUM
分类号 H01L29/94;H01L21/00 主分类号 H01L29/94
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