发明名称 |
Plasma processing apparatus and method of producing amorphous silicon thin film using same |
摘要 |
Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding ports for discharging source gas toward the inside of the plurality of gas exhaust holes; and the gas-feeding pipes and the gas-feeding ports are arranged in a manner such that extended lines, representing the direction of the flow of the source gas discharged from the gas-feeding ports, intersect the end surface open regions at the interface of the gas exhaust chamber to the gas exhaust holes. Also disclosed is a method of producing the amorphous silicon thin film using the plasma processing apparatus. |
申请公布号 |
US8431996(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201013258813 |
申请日期 |
2010.03.15 |
申请人 |
SAKAMOTO KEITARO;NOMURA FUMIYASU;KOMORI TSUNENORI;TORAY INDUSTRIES, INC. |
发明人 |
SAKAMOTO KEITARO;NOMURA FUMIYASU;KOMORI TSUNENORI |
分类号 |
H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L27/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|