发明名称 |
Solid-state imaging device, method of producing the same, and imaging device |
摘要 |
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. |
申请公布号 |
US8431880(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201213349149 |
申请日期 |
2012.01.12 |
申请人 |
MATSUMOTO TAKUJI;YAMAGUCHI TETSUJI;TATANI KEIJI;NISHIMURA YUTAKA;ITONAGA KAZUICHIRO;MORI HIROYUKI;KUBO NORIHIRO;KOGA FUMIHIKO;IZAWA SHINICHIRO;OOKI SUSUMU;SONY CORPORATION |
发明人 |
MATSUMOTO TAKUJI;YAMAGUCHI TETSUJI;TATANI KEIJI;NISHIMURA YUTAKA;ITONAGA KAZUICHIRO;MORI HIROYUKI;KUBO NORIHIRO;KOGA FUMIHIKO;IZAWA SHINICHIRO;OOKI SUSUMU |
分类号 |
H01L27/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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