发明名称 PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS
摘要 <p>Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.</p>
申请公布号 SG188537(A1) 申请公布日期 2013.04.30
申请号 SG20130018858 申请日期 2011.09.21
申请人 NOVELLUS SYSTEMS, INC. 发明人 LI, MING;KANG, HU;SRIRAM, MANDYAM;LAVOIE, ADRIEN
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