发明名称 METHOD OF FORMING NON-VOLATILE MEMORY DEVICE HAVING SMALL CONTACT AND RELATED DEVICE
摘要 <p>PURPOSE: A method for forming a nonvolatile memory device with a small contact and a related device are provided to reduce a contact area between a data storage plug and a bottom electrode by decreasing a horizontal width of a first part. CONSTITUTION: A pipe type electrode includes a first part(41A) and a second part. The second part of the pipe type electrode is secondly trimmed. A sacrificial spacer is removed. The first part of the pipe type electrode is exposed. A data storage plug(63) is formed on the first part of the pipe type electrode.</p>
申请公布号 KR20130042975(A) 申请公布日期 2013.04.29
申请号 KR20110107159 申请日期 2011.10.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH, GYU HWAN;PARK, DOO HWAN
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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