发明名称 |
METHOD OF FORMING NON-VOLATILE MEMORY DEVICE HAVING SMALL CONTACT AND RELATED DEVICE |
摘要 |
<p>PURPOSE: A method for forming a nonvolatile memory device with a small contact and a related device are provided to reduce a contact area between a data storage plug and a bottom electrode by decreasing a horizontal width of a first part. CONSTITUTION: A pipe type electrode includes a first part(41A) and a second part. The second part of the pipe type electrode is secondly trimmed. A sacrificial spacer is removed. The first part of the pipe type electrode is exposed. A data storage plug(63) is formed on the first part of the pipe type electrode.</p> |
申请公布号 |
KR20130042975(A) |
申请公布日期 |
2013.04.29 |
申请号 |
KR20110107159 |
申请日期 |
2011.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, GYU HWAN;PARK, DOO HWAN |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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