| 摘要 |
PURPOSE: A method for programming a nonvolatile memory device is provided to improve reliability by increasing or decreasing the width of a threshold voltage distribution in a necessary section of a program pulse. CONSTITUTION: A program pulse is applied to program a plurality of memory cells. A program is repeatedly verified by increasing a pulse voltage of the program pulse to correspond to a step voltage. The program pulse is divided into two or more sections according to the size of the pulse voltage. The step voltage in one section of the program pulse is different from the step voltage in the other section of the program pulse. |
