| 发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high electron mobility transistor and a method of manufacturing the same. <P>SOLUTION: This invention is related to a high electron mobility transistor (HEMT) and a method of manufacturing the same. The high electron mobility transistor includes a substrate, a high electron mobility transistor stack distant from the substrate, and a pseudo-insulation layer located between the substrate and the high electron mobility transistor stack. The pseudo-insulation layer includes at least two materials having different phases. The at least two materials having different phases include a solid material and a non-solid material. The solid material is a semiconductor material, and the non-solid material is air. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013077822(A) |
申请公布日期 |
2013.04.25 |
| 申请号 |
JP20120216143 |
申请日期 |
2012.09.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM JUN-YOUN;LEE JAE-WON;CHOI HYO JI |
| 分类号 |
H01L21/338;H01L21/205;H01L21/306;H01L21/3065;H01L21/336;H01L21/762;H01L21/764;H01L27/12;H01L29/06;H01L29/778;H01L29/78;H01L29/786;H01L29/812 |
主分类号 |
H01L21/338 |
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