| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a configuration having orientation that is advantageous in production of a superjunction wafer and also advantageous in production of a trench gate structure. <P>SOLUTION: On an N-type semiconductor substrate 1 using a (100)-plane as a surface, a plurality of first trenches 2 extending in a <001> direction and using a (010)-plane and a (0-10) plane as lateral faces are formed. The trenches 2 are filled with a P-type epitaxial layer 3 to produce a superjunction wafer. On the superjunction wafer, a region of a second conductivity type extending in a direction orthogonal to the <001> direction is formed to produce a semiconductor element having a planer gate structure. <P>COPYRIGHT: (C)2013,JPO&INPIT |
