发明名称 |
MASK FOR EUV LITHOGRAPHY, EUV LITHOGRAPHY SYSTEM AND METHOD FOR OPTIMISING THE IMAGING OF A MASK |
摘要 |
A mask (105) for EUV lithography includes a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask (105) and a method for optimising the imaging of such a mask (105).
|
申请公布号 |
US2013100428(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213714648 |
申请日期 |
2012.12.14 |
申请人 |
CARL ZEISS SMT GMBH;CARL ZEISS SMT GMBH |
发明人 |
RUOFF JOHANNES;KRAEHMER DANIEL |
分类号 |
G03F7/20;G03F1/22;G03F1/24 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|