发明名称 PINHOLE-FREE DIELECTRIC THIN FILM FABRICATION
摘要 A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.
申请公布号 WO2012174260(A3) 申请公布日期 2013.04.25
申请号 WO2012US42487 申请日期 2012.06.14
申请人 APPLIED MATERIALS, INC.;JIANG, CHONG;KWAK, BYUNG SUNG, LEO 发明人 JIANG, CHONG;KWAK, BYUNG SUNG, LEO
分类号 H01M14/00 主分类号 H01M14/00
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