| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve wiring credibility by reducing variation in resistance in a connecting portion between a penetration electrode and wiring. <P>SOLUTION: A hole part for a penetration electrode is provided, and over etching is applied to a wiring layer. By burying copper in the hole part, a penetration electrode comprised of copper is formed and connected with wiring comprised of aluminum. Thereafter, a contact region G in which the penetration electrode is connected with wiring, is alloyed by heat treatment. Therefore, variation in resistance between the penetration electrode and wiring is reduced and wiring credibility is improved. The present invention may be applicable to a semiconductor device and manufacturing thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT |
