| 摘要 |
A method for forming a MIM capacitor structure includes the steps of obtaining a base structure provided with a recess, the recess exposing a conductive bottom electrode plug; selectively growing Ru on the bottom electrode plug, based on a difference in incubation time of Ru growth on the bottom electrode plug compared to the base structure material; oxidizing the selectively grown Ru; depositing a Ru-comprising bottom electrode over the oxidized Ru; forming a dielectric layer on the Ru-comprising bottom electrode; and-forming a conductive top electrode over the dielectric layer.
|
