发明名称 |
Temperature Compensation in a Semiconductor Micromechanical Resonator Via Charge Carrier Depletion |
摘要 |
A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed. |
申请公布号 |
US2013099629(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113276931 |
申请日期 |
2011.10.19 |
申请人 |
AYAZI FARROKH;SAMARAO ASHWIN |
发明人 |
AYAZI FARROKH;SAMARAO ASHWIN |
分类号 |
H01L41/04 |
主分类号 |
H01L41/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|