| 摘要 |
<p>The purpose of the present invention is to provide a sintered oxide which does not contain gallium (Ga) that is expensive and which has low bulk resistance, and to also provide an oxide semiconductor thin film which has the same chemical composition as that of the sintered oxide. A sintered oxide comprising indium (In), zinc (Zn), a metal element (X) (wherein X represents at least one element selected from Al and Ti) and oxygen (O), wherein the ratio of the number of atoms among indium (In), zinc (Zn) and the metal element (X) fulfils the requirements represented by the following formulae 0.2 = In/(In+Zn+X) = 0.8, 0.1 = Zn/(In+Zn+X) = 0.5, and 0.1 = X/(In+Zn+X) = 0.5; and an oxide semiconductor film which has the same chemical composition as that of the sintered oxide.</p> |
