FABRICATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR PREPARED BY THE METHOD, SENSOR DEVICE PREPARED BY THE METHOD

摘要

PURPOSE: A method for fabricating an oxide semiconductor thin film transistor and a display device having the oxide semiconductor thin film transistor prepared by the method, a sensor device prepared by the method are provided to reduce the number of a mask by forming a gate, a source, and drain electrode at the same time in a deposition and patterning process. CONSTITUTION: An oxide semiconductor and a gate insulation layer are successively deposited on a substrate(S1). The gate insulation layer is patterned(S2). The oxide semiconductor is patterned(S3). A gate electrode, a source electrode, and a drain electrode are formed on the gate insulation layer and the oxide semiconductor(S4). [Reference numerals] (AA) Start; (BB) End; (S1) Successively depositing an oxide semiconductor and a gate insulation layer on a substrate; (S3) Patterning the gate insulation layer; (S5) Patterning the oxide semiconductor; (S7) Forming a gate electrode, a source electrode, and a drain electrode;