发明名称 Pad interface circuit and method of improving reliability of the pad interface circuit
摘要 The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.
申请公布号 US8427795(B2) 申请公布日期 2013.04.23
申请号 US20100656223 申请日期 2010.01.21
申请人 JEON CHAN-HEE;KIM HAN-GU;HONG MIN-SUN;HA TAE-HOON;KIM DOO-HYUNG;LEE JUNG-SOON;SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON CHAN-HEE;KIM HAN-GU;HONG MIN-SUN;HA TAE-HOON;KIM DOO-HYUNG;LEE JUNG-SOON
分类号 H02H9/04 主分类号 H02H9/04
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