发明名称 |
Pad interface circuit and method of improving reliability of the pad interface circuit |
摘要 |
The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor. |
申请公布号 |
US8427795(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100656223 |
申请日期 |
2010.01.21 |
申请人 |
JEON CHAN-HEE;KIM HAN-GU;HONG MIN-SUN;HA TAE-HOON;KIM DOO-HYUNG;LEE JUNG-SOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON CHAN-HEE;KIM HAN-GU;HONG MIN-SUN;HA TAE-HOON;KIM DOO-HYUNG;LEE JUNG-SOON |
分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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