发明名称 Thin film transistor substrate and display device
摘要 A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
申请公布号 US8426862(B2) 申请公布日期 2013.04.23
申请号 US201213550995 申请日期 2012.07.17
申请人 ARAI TOSHIAKI;SONY CORPORATION 发明人 ARAI TOSHIAKI
分类号 H01L29/04 主分类号 H01L29/04
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