Wet metal-etching method and apparatus for MEMS device fabrication

摘要

The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.