| 摘要 |
A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer (2') is formed on a substrate (1'). A p-type conductive layer (3') is formed thereon. A second n-type conductive layer (4') is formed thereon. On the under surface of the substrate (1'), there is a drain electrode (13') connected to the first n-type conductive layer (2'). On the upper surface of the substrate (1'), there is a source electrode (11') in ohmic contact with the second n-type conductive layer (4'), and a gate electrode (12') in contact with the first n-type conductive layer (2'), p-type conductive layer (3'), the second n-type conductive layer (4') through an insulation film (21'). The gate electrode (12') and the source electrode (11') are alternately arranged. The p-type conductive layer (3') includes In. |
