发明名称 |
METHOD FOR PRODUCING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND RESULTING SINGLE-CRYSTAL 3C-SIC SUBSTRATE |
摘要 |
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed. |
申请公布号 |
KR20130040178(A) |
申请公布日期 |
2013.04.23 |
申请号 |
KR20127025272 |
申请日期 |
2011.03.14 |
申请人 |
AIR WATER, INC. |
发明人 |
ASAMURA HIDETOSHI;KAWAMURA KEISUKE;OBARA SATOSHI |
分类号 |
C30B29/36;C30B25/20;H01L21/20 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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