发明名称 Method and apparatus for performing multi-block access operation in nonvolatile memory device
摘要 A nonvolatile memory device comprises a first mat, a second mat, a third mat, a first address decoder, a second address decoder, and a third address decoder. The first mat comprises first memory blocks, the second mat comprises second memory blocks, and the third mat comprises third memory blocks. The first address decoder selects one of the first memory blocks according to a first even address, the second address decoder selects one of the second memory blocks according to a second even address or a first odd address, and the third address decoder selects one of the third memory blocks according to a second odd address.
申请公布号 US8427898(B2) 申请公布日期 2013.04.23
申请号 US201113008441 申请日期 2011.01.18
申请人 KIM CHAN HO;YOUN DONG KYU;HWANG SANG WON;LEE JIN YUB;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM CHAN HO;YOUN DONG KYU;HWANG SANG WON;LEE JIN YUB
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
主权项
地址