SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving operation speed and reducing power consumption, and a manufacturing method thereof.

SOLUTION: A semiconductor device comprises: a first element isolation insulating film for defining a first region on a semiconductor substrate; a first conductive layer of a first conductivity type formed on the first region of the semiconductor substrate; a semiconductor layer formed on the semiconductor substrate and having a second conductive layer of the first conductivity type formed by connecting the first conductive layer to a second region which is a part of the first region and a third conductive layer of the first conductivity type formed by connecting the first conductive layer to a third region which is the other part of the first region; a second element isolation insulating film provided in the semiconductor layer and isolating the second conductive layer and the third conductive layer; a gate insulating film formed on the second conductive layer; and a gate electrode electrically connected to the first conductive layer via the third conductive layer.

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