| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography device and a charged particle beam lithography method that can securely suppress a rise in temperature in a sub-deflection region when repetitive irradiation with a charged particle beam is caused as drawing patterns overlap in the sub-deflection region. <P>SOLUTION: A deflection control section 32 includes: a main deflection control section 32a which positions a predetermined sub-deflection region; a sub-deflection control section 32b which controls a predetermined shot position; an area counter 32c which sums up shot tare in the sub-deflection region to finds drawing area; and a determination section 32d which determines whether the drawing area exceeds a set value when drawing processing in the predetermined sub-deflection region is performed, and interrupts the drawing processing and makes the main deflection control part 32d position the predetermined sub-deflection region again and restart the drawing processing when the drawing area exceeds the set value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
