| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced interlayer wiring resistance, and a method of manufacturing the same. <P>SOLUTION: A semiconductor device includes: a substrate; a first catalyst metal film on the substrate; a graphene on the first catalyst metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film electrically conductive to the graphene on the bottom of the contact hole; a second catalyst metal film, on the conductive film, processed with plasma of one or more kinds of gases selected from hydrogen, nitrogen, ammonia, and a rare gas; and carbon nano-tubes on the second catalyst metal film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
