Lithography Mask and Method of Forming a Lithography Mask

摘要

A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough.