| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress nonuniformity of dry etching depth of silicon layers exposed to an inner surface of holes or grooves formed so as to be vertical to a substrate surface in a laminated film formed on a substrate and having a layered structure in which silicon films and insulating films are alternately laminated. <P>SOLUTION: There is provided a dry etching method for etching silicon layers exposed to an inner surface of holes or grooves formed so as to be vertical to a substrate surface in a laminated film formed on a substrate and having a layered structure in which silicon films and insulating films are alternately laminated, by using an etching gas. The method uses as the etching gas a gas containing F<SB POS="POST">2</SB>and at least one type of gas selected from ClF<SB POS="POST">3</SB>, BrF<SB POS="POST">5</SB>, BrF<SB POS="POST">3</SB>, IF<SB POS="POST">7</SB>and IF<SB POS="POST">5</SB>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
