| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which can achieve a normally-off operation while inhibiting deterioration of properties. <P>SOLUTION: A compound semiconductor device of an embodiment comprises: a substrate 1; an electron transit layer 3 and an electron supply layer 5 which are formed above the substrate 1; a gate electrode 11g, a source electrode 11s and a drain electrode 11d which are formed above the electron supply layer 5; and a p-type semiconductor layer 8 formed between the electron supply layer 5 and the gate electrode 11g. At least an element of the same sort as an element composing either of the electron transit layer 3 or the electron supply layer 5 is used as a p-type impurity contained in the p-type semiconductor layer 8. <P>COPYRIGHT: (C)2013,JPO&INPIT |
