发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of reducing a wasted portion in a semiconductor substrate as much as possible, and simultaneously, of achieving reduction in manufacturing cost and reduction in environmental load by reusing the semiconductor substrate. <P>SOLUTION: A method of manufacturing a semiconductor device according to an embodiment includes: implanting ion to a first substrate; bonding the first substrate and a second substrate with each other; emitting microwave to agglomerate ion in a planar state on a desired position in the first substrate and form an agglomeration region spread in a planar state; detaching the bonded first and second substrates in the agglomeration region to separate into the second substrate having a part of the first substrate and the residual first substrate; and grinding a part of the rear face side second substrate on an opposite side of the detachment surface in the second substrate having the part of the first substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013069719(A) 申请公布日期 2013.04.18
申请号 JP20110205078 申请日期 2011.09.20
申请人 TOSHIBA CORP 发明人 SUGURO KYOICHI
分类号 H01L21/02;H01L21/265;H01L27/12 主分类号 H01L21/02
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