发明名称 MASK BLANK MANUFACTURING METHOD AND MASK FOR TRANSFER
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask blank manufacturing method capable of suppressing occurrence of a black defect in a mask for transfer. <P>SOLUTION: The manufacturing method is adapted to manufacture the mask blank provided with a thin film for forming a transfer patten on a substrate. The thin film comprises a material allowed to be subjected to dry etching. The manufacturing method includes a first processing step of applying surface treatment to the surface of the thin film using a first processing liquid including an etching hindrance material with a concentration higher than 0.3 ppb and pH of 8 or higher; a second processing step of applying surface treatment using a second processing liquid including an etching hindrance material with a concentration of 0.3 ppb or less and pH of 8 or higher, after the first processing step; and a third processing step of applying surface treatment using a third processing liquid including an etching hindrance material with a concentration of 0.3 ppb or less and pH of 6 or higher and less than 8, after the second processing step. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013068727(A) 申请公布日期 2013.04.18
申请号 JP20110206169 申请日期 2011.09.21
申请人 HOYA CORP 发明人 SUZUKI TOSHIYUKI;YAMADA TAKAYUKI
分类号 G03F1/68;G03F1/58;H01L21/3065 主分类号 G03F1/68
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