| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved luminous efficiency. <P>SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and an electron-blocking layer. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and contains a nitride semiconductor. The electron-blocking layer is provided between the light-emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing toward the p-type semiconductor layer from the light-emitting layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
