| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma controller and a flow controller capable of performing high speed control of flow rate in a narrow section near a flow value of an introduction gas being introduced into a vacuum chamber even if the flow value is large, and capable of maintaining a state optimum for deposition by sustaining the plasma in the vacuum chamber in a desired state. <P>SOLUTION: The plasma controller comprises a first valve 11 provided on a first flow path L1 through which an introduction gas introduced into a vacuum chamber VC flows, a first valve control unit 12 which controls the opening of the first valve 11 so that the flow rate of the introduction gas introduced into the vacuum chamber VC through the first valve 11 has a first flow rate, a plasma monitor 3, a second valve 21 provided on a second flow path L2 through which the introduction gas flows, and a second valve control unit 22 which controls the opening of the second valve 21 based on the deviation of the measuring plasma intensity measured by the plasma monitor 3 from a predetermined preset plasma intensity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
